光刻工艺毕业论文

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1、 毕业设计（论文）报告毕业设计（论文）报告 题 目 光刻光刻工艺工艺的研究的研究 2012 年 3 月 i 光刻光刻工艺工艺的研究的研究 摘要：摘要：在平面晶体管和集成电路生产中，要进行多次的光刻，以实现选择 性扩散和金属膜布线的目的。 光刻工艺是利用光刻胶的感光性和耐蚀性， 在 SIO2 或金属膜上复印并刻蚀出与掩模版完全对应的几何图形.由于光刻工艺是一种非 常精细的表面加工技术,在平面器件和集成电路生产中得到广泛应用.如果把硅 片的外延、氧化、扩散和淀积看成是器件结构的纵向控制的话,那么，器件的横 向控制就几乎全部有光刻来实现.因此,光刻的精度和质量将直接影响器件的性 能指标,同时也是影响

2、器件的成品率和可靠性的重要因素. 目前生产上通常采用的紫外光接触暴光法光刻工艺的一般过程;列出几种常 用的光刻腐蚀剂配方;最后对光刻工艺中较常见的质量问题进行分析和讨论. 关键词关键词：光刻、工艺、光刻胶、质量问题。 ii Semiconductor lithography technology Abstract：In the planar transistor and integrated circuit production, to be repeated lithography, in order to achieve selective proliferation and metal

3、film wiring purposes. Photoresist lithography process is the use of photosensitive and corrosion resistance, in the SIO2 or etching a metal film copies and corresponding exactly with the mask geometry. As lithography is a very fine surface processing technology, In the production of planar devices a

4、nd integrated circuits are widely used. If the silicon epitaxy, oxidation, diffusion and deposition as the vertical structure of the control device, then the lateral control device and almost all had a lithography to achieve. Therefore, the accuracy and quality of lithography will directly affect the device performance, but also affect device yield and reliability of the important factors. Commonly used on current production of UV exposure lithography exposure the general process of law; li