1、3150 英文单词，英文单词，1.7 万英文字符万英文字符，中文，中文 5400 字字 文献出处：文献出处：Wojtkowski W, Zankiewicz A. Parallel RF Power Amplifiers Temperature Monitoring System Based on FPGA DeviceJ. IFAC-PapersOnLine, 2018, 51(6): 414-419. Parallel RF Power Amplifiers Temperature Monitoring System Based on FPGA Device Wojciech Wojtko
2、wski. Andrzej Zankiewicz Abstract The paper describes FPGA based temperature measurement system, for parallel monitoring of temperatures of the power semiconductors devices in RF power amplifiers. Proposed system allows for fast detection of the asymmetry in parallel RF power amplifier caused by fai
3、lure of a single semiconductor power device like CMOS or MOSFET high power transistor. This information is important for evaluation of the system efficiency, current flow symmetry, and allowable output power in a given RF amplifier configuration. The article presents original concept of reading meas
4、urements from many 1-wire temperature sensors with minimal time delay between individual measurements thanks to digital temperature sensors operating on separate serial 1-Wire buses. FPGA device collects data from the temperature sensors and sends them through wireless interface to a remote terminal
5、. The structure of the system as well as particular devices are described in the paper. The paper also presents selected results of practical experiments performed to confirm that the assumed concept of using an FPGA device to perform the high simultaneous readings from many sensors is feasible. Key
6、words: Digital temperature sensor, RF power amplifiers, temperature measurement, 1-Wire bus, semiconductor power devices. 1. INTRODUCTION Power semiconductor devices are crucial components in modern power electronic systems. Their condition has high influence on the overall system performance and can cause systems malfunction in a worst case. One of the important parameters, which give information about their condition and which can be easily observed on-line during the system operation, is t
